! s i l ico n m o s f e t t e c h n o lo g y o p e rati o n f r o m 24 v t o 5 0 v h i g h p o w e r g a in e x tre m e r u g g e dn e ss i n t e r n a l i n p u t a n d o u t p u t m a tc h i n g e x c e l l e n t th e r m a l s t a b i l ity a l l g o ld b on d i n g s c h e m e p b - f re e a n d r o hs c o m p l i a n t t a b le 1 : t y p ical rf p e r f o r m a n c e i n b ro a d b a n d t e x t f i x t u re a t 2 5 ? t e m p e r a t u re w ith rf p u lse c o n d iti o n s o f p u lse w id t h = 1 0 s a n d p u l s e d u t y c y cle = 1 % . t h e h i g h p o w e r hv v 1 0 1 2 - 5 5 0 d e v ice is a n e n ha n c e m e n t m od e rf m o s f e t p o w e r tra n sist o r d e si g ne d f o r p u lse d a p p li c a ti o n s i n t h e l - b a n d f r o m 1 0 2 5 m h z t o 1 1 5 0 m h z . t h e h i g h v o lt a g e mosfet t e c h n o lo g y p ro d u c e s o v e r 5 5 0 w o f p u l s e d o u t p u t p o w e r w h i l e o f f e r i n g h i g h g a in , h ig h e f f ic i e n c y , an d e a s e o f m a t c h in g w i t h a 5 0 v s up p l y . t h e v e rtica l d e v ice stru c t u re a ss u res h i g h rel i a b i l i t y an d ru g g edn e ss a s t h e d e v ice is s p e ci f ie d t o w it h st a n d a 2 0 : 1 v s w r a t a l l p h a s e a n g les u nd e r f u l l r a t e d o u t p u t p o w e r. de v ice p a rt n u m b e r: hv v 1 0 1 2 - 5 5 0 e v a lu a ti o n k i t p a rt n u m b e r : hv v 1 0 1 2 - 5 5 0 - e k o r d e r i n g i n f o r m a t i on d es c r i p t i on t yp i c a l pe r f o r m a n c e f e a t u r es rev . a 7 5 2 5 e t h el ave n u e nor t h holly w ood, ca 91605 ( 8 1 8 ) 982- 1 2 0 0 ww w . a d s e m i . c o m s pe c i f i c a t ions are s ubje c t to change without notice. ge p a c k a ge
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 1 8 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15 / 2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 2 h vv 101 2 - 55 0 high voltage, high ruggedness l - band high power pulsed transistor 1 0 25 - 1 15 0 m hz, 1 0 s pulse, 1 % duty for airborne dme applications the i n novative semiconductor company! ! ! ! ! ! ! ! ! ! ! ! ! ! the hvv101 2 - 55 0 device is capable of withstanding an output load mismatch corresponding to a 20:1 vswr at rated output power and nominal operating voltage across the frequency band of operation. ! ! ! ! ! ! t ypical performance at 10 25 m h z with an input power of 12w. ! ! ! "#$%&' ! ()*)$+,+* ! -)'.+ ! /01, ! - 2"" ! 2*)10 3 "&.*4+!-&',)5+ ! 67 ! - ! - 8 "" ! 8),+ 3 "&.*4+!-&',)5+ ! 3 9: ;!9: ! - ! < 2" =$)>? ! 2*)10!@.**+0, ! a: ! b ! ( 2 9 ! (&c+*!21dd1e),1&0 ! 7::: ! f ! ( 10 ! <0e.,!(&c+* ! gh ! f ! i " ! ",&*)5+!i+$e+*),.*+ ! 3 a: ! ,& ! j97: ! k@ ! i l ! l.04,1&0!i+$e+*),.*+ ! g:: ! k@ ! !"#$%& ' ()*)#+,+* ' -). ' /01, ' ? l@ g ! im+*$)'!n+d1d,)04+ ! :o:p ! k@qf ! "#$%&' ! ()*)$+,+* ! i+d,!@&0r1,1&0 ! s)> ! /01,d ! tsi g ! t&)r! s1d$),4m! i&'+*)04+ ! u!v!9 97: ! swx ! g:y9 ! -"fn ! "#$%&' ! ()*)$+,+* ! @&0r1,1&0d ! s10 ! i#e14 )' ! s)> ! /01, ! - zn=2""? ! 2*)10 3 "&.*4+!z*+)[r&c0 ! - 8" v:-;< 2 v 7 $b ! 67 ! 9: g ! 3 ! - ! < 2"" ! 2*)10!t+)[)5+!@.**+0, ! - 8" v:-;- 2" v 7: - ! 3 ! 9:: ! a:: ! \b ! < 8"" ! 8),+!t+)[)5+!@.**+0, ! - 8" v7-;- 2" v:- ! 3 ! g ! 9: ! \b ! 8 ( g ! (&c+*!8)10 ! uv 9 :g7;!997: swx ;!(10v9gf ! 9] o7 ! 9^op ! 3 ! rz ! hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 1 8 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15 / 2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 3 h vv 101 2 - 55 0 high voltage, high ruggedness l - band high power pulsed transistor 1 0 25 - 1 15 0 m hz, 1 0 s pulse, 1 % duty for airborne dme applications the i n novative semiconductor company! ! ! ! ! ! ! ! notes: 1) rated at t case = 25? 2 ) all parameters measured under pulsed conditions at 12 w in put power measured at the 10% point of the pulse with pulse width = 1 0 sec, duty cycle = 1 % and v dd = 50 v, i dq = 100ma in a broadband matched test fixture. 3 ) amount of gate voltage required to attain nominal quiescent current. 4 ) guaranteed by design. "#$%&' ! ()*)$+,+* ! @&0r1,1&0d ! s10 ! i#e14)' ! s)> ! /01,d ! , * a ! n1d+!i1$+ ! uv 9 97: swx ! 3 ! c p7 ! 7: ! 0d ! , ` a ! u)''!i1$+ ! uv9 97: swx ! 3 ! c 9 7 ! 7: ! 0d ! (2 a ! (.'d+!2*&&e ! uv9 97: swx ! 3 ! :o 9 ! :op ! rz ! pulse characteristics
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 1 8 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15 / 2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 4 h vv 101 2 - 55 0 high voltage, high ruggedness l - band high power pulsed transistor 1 0 25 - 1 15 0 m hz, 1 0 s pulse, 1 % duty for airborne dme applications the i n novative semiconductor company! typical device performance under class ab mode of operation and rf pulse condi tions of 1 0 s pulse width and 1 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at 1 15 0mhz. !!!!!!!!!!! ! typical device performance under class ab mode of operation and rf pulse conditions of 1 0 s pulse width and 1 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at 1 15 0mhz.
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 1 8 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15 / 2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 5 h vv 101 2 - 55 0 high voltage, high ruggedness l - band high power pulsed transistor 1 0 25 - 1 15 0 m hz, 1 0 s pulse, 1 % duty for airborne dme applications the i n novative semiconductor company! ! ! ! !!!!!! !!!!!! ! typical device performance under class ab mode of operation and rf pulse condi tions of 1 0 s pulse width and 1 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at an input power of 12 w . ! !!!!!! !!!!!! ! typical device performance under class ab mode of operation and rf pulse condi tions of 1 0 s pulse width and 1 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at an input power of 12 w .
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 1 8 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15 / 2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 6 h vv 101 2 - 55 0 high voltage, high ruggedness l - band high power pulsed transistor 1 0 25 - 1 15 0 m hz, 1 0 s pulse, 1 % duty for airborne dme applications the i n novative semiconductor company! typical device performance under class ab mode of operation at 1090mhz and rf pulse conditions of 1 0 s pulse width and 1 % duty cycle with vdd = 50 v and idq = 100m a . the high voltage silicon verti cal technology shows less than 1.5 db of power degradation over an extreme case teperature rise of 125?. measured at p1db compression point temp gain (db) power (w) power (dbm) -40c 19.5 622 57.9 0c 18.9 695 58.4 25c 18.1 681 58.3 85c 15.7 561 57.5 ! w--9:9 g 3 77 :!(+*`&*$)04+!&d+*!i+$e+*),.*+
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 1 8 a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15 / 2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 7 h vv 101 2 - 55 0 high voltage, high ruggedness l - band high power pulsed transistor 1 0 25 - 1 15 0 m hz, 1 0 s pulse, 1 % duty for airborne dme applications the i n novative semiconductor company! frequency zin* (ohms) zout* (ohms) 1025mhz 0.95 - j1.4 1.2 - j2.8 1060mhz 0.97 - j1.2 1.1 - j2.5 1150mhz 1.1 - j0.66 1.0 - j1.9 zin* zout* output impedance matching network input impedance matching network test circuit impedances ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !!!! !
h v v 101 2 - 5 5 0 h i g h vo l ta g e, hi g h r u g g e d n e ss l - ban d h i gh p o wer pu l s ed t ra n s is tor 1 0 25 - 1 1 5 0 m h z , 1 0 s pu l s e, 1 % duty for a i rb o rne d me app l i c at i ons p a r t d e s c r i p t i on p a r t n u m b e r m a n u f a c t ur e r c 1 , c 2 : 39 p f avx 805 c h i p c apa c i t o r 712 - 1388 - 1 - n d d i g i k e y c 3 , c 7 : 39 p f a t c 1210 100 b c h i p c apa c i t o r 478 - 2646 - 1 - n d d i g i k e y c 4 : 1 k p f 100 v c h i p c apa c i t o r ( x 7 r 1206 ) 399 - 1222 - 2 - n d d i g i k e y c 5 , c 8 : 10 k p f 100 v c h i p c apa c i t o r ( x 7 r 1206 ) 399 - 1236 - 2 - n d d i g i k e y c 6 : 10 u f 6 v t an t a l u m s m d 478 - 3134 - 1 - n d d i g i k e y c 9 , c 10 : 220 u f 63 v e le c t f k s m d p c e 3 484 t r - n d d i g i k e y r 1 : 470 o h m s c h i p r e s i s t o r ( 1206 ) 311 - 470 e r c t - n d d i g i k e y r 2 : 100 k o h m s c h i p r e s i s t o r ( 1206 ) 311 - 100 k e rc t - n d d i g i k e y r f c onne c t o rs t y pe " n " r f c onne c t o rs 5919 cc - t b-7 c oa x i c o m dc d r a i n c on n c onne c t o r j a c k b a nana n y l on r e d j 151 - n d d i g i -k e y dc g r ound c onn . c onne c t o r j a c k b a nana n y l on b la c k j 152 - n d d i g i -k e y dc g a t e c onn . c onne c t o r j a c k b a nana n y l on g r ee n j 153 - n d d i g i -k e y p c b b o a rd p c b : 25 m il s t h i c k , 10 . 2 d i e l e c t r i c , 1 o z c oppe r d s e l e c t r o n i cs d e v i c e c l a m p h v 800 p a ck a ge n y l o n c l a m p f oo t f x t 00011 6 coo l i nno v a t i o n h ea t s in k c oo l i nn o v a t i o n s a l u m i nu m h ea t s i n k 3 - 252510 r s 341 1 coo l i nno v a t i o n s . s . s c r e w s ( 4 ) 4 - 40 x 1 / 4 s t a i n l e s s s t ee l s o c k e t h e x h ead p 24239 3 c oppe r s t a t e b o l t a ll o y s c r e w s ( 4 ) 4 - 40 x 1 / 2 a ll o y s o ck e t c ap sc r e w h e x h ea d s c as - 0440 - 08 c s m a ll p a r t s i n c m e t a l w a s he r ( 6 ) #4 w a s h e r z i n c p l t d s t ee l lo ck z s l w - 004 - m s m a ll p a r t s i n c a ll o y s c r e w s ( 2 ) 4 - 40 x 3 / 4 a ll o y s o c k e t c ap s c r e w h ea d s c as - 0440 - 12 m s m a ll p a r t s i n c d e m on s tra t io n b oa r d o u tli n e d e m o n stra t i o n ci r c u it b oa r d p ict u r e hv v 1 0 1 2 - 5 5 0 d e m on stra t io n ci r c u it b oa rd b i l l o f m a t e r i a ls
p a c k a g e d i m e n s i o n s no t e : d r a w i n g i s n o t a c t u a l s i z e . s o u r c e g a t e d r a i n asi p a r t number jd a te c ode inches mm asi s e m i c o n du c t o r , i n c . ( asi ) r e s e r v e s t h e r i g h t t o m a k e c h a n g e s to i n f o r m a t i o n p u bl i s h e d i n t h i s d o c u m e n t a t a n y t i m e a n d w i t h o ut n o t i c e . t h i s do c u m e n t s up e r s e d e s a n d r e p l a c e s a l l i n f o r m a t i o n s up p l i e d p r i o r t o t h e pub l i c a t i o n h e r e o f . i n f o r m a t i o n i n t h i s d o c u m e n t i s b e l i e v e d t o b e a c c u r a t e a n d r e l i a b l e . h o w e v e r , asi d o e s n o t g i v e a n y r e p r e s e n t a t i o n s o r w a r r a n t i e s , e i t h e r e x p r e s s o r i m p l i e d , a s to t h e a c c u r a c y o r c o m p l e t e n e s s o f s u c h i n f o r m a t i o n a n d s h a l l h a v e n o l i a bi l i t y no liability for conse- -quences resulting from the use of such information. no l i c e n s e , e i t h e r e x p r e s s e d o r i m p l i e d , i s c o n v e y e d u n d e r a n y asi i n t e l l e c t u a l p r o p e r t y r i g h t s , i n c l u d i ng a n y p a t e n t r i g h t s .
|
